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This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC10065DLF in PowerFLAT™ 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.
主要特性
- Less-than-1mm height package
- High creepage package
- No or negligible reverse recovery
- Temperature independent switching behavior
- High forward surge capability
- Very low drop forward voltage
- Power efficient product
- ECOPACK2 compliant component
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Key benefits of the Silicon Carbide technology in car electrification application
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质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STPSC10065DLF | 批量生产 | PowerFLAT 8x8 HV | 工业 | Ecopack2 | |
STPSC10065DLF
Package:
PowerFLAT 8x8 HVMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | 更多信息 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STPSC10065DLF | 1 distributors | 获取样片 立即购买 | 批量生产 | EAR99 | NEC | Tape And Reel | PowerFLAT 8x8 HV | - | - | 175 | CHINA | 1.474 / 50 | ||
