These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.
主要特性Designed for soft commutation only
Maximum junction temperature: TJ= 175 °C
Minimized tail current
VCE(sat)= 2.0 V (typ.) @ IC= 25 A
Tight parameters distributionSafe paralleling
Low VFsoft recovery co-packaged diode
Low thermal resistance
Lead free package
|型号||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
RoHS Compliance Grade
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