意法半导体的IGBT基于先进的专有沟槽场截止(TFS)技术,可在静态特性和动态特性之间实现最理想的平衡,而175°C的最大结温(j max.)增加了器件的可靠性和寿命。裸露晶片IGBT最大电压为1700V且集电极电流最高达200A,可提供不同的平衡,适用于电机控制、伺服驱动、焊接、太阳能和牵引逆变器等广泛应用,此外还提供不同的封装选项,如卷带和盘装中粘性箔或密封晶片上的晶圆。对于汽车产品,由于广泛的测试和检查,KGD(已知良好芯片)测试设备的可用性确保了高度的可靠性和质量。
意法半导体的KGD测试包括:
- 晶片可追溯性(晶圆批次、晶圆编号、晶片在晶圆内的位置以及目录)
- 100%目检顶侧和后侧
- 100%涵盖数据表中的测试
而且,意法半导体还可按需开发新型IGBT晶片形式的产品。
我们种类繁多的STPOWER产品组合采用先进的封装和保护,提供高可靠性和安全性,帮助设计人员为客制化的高效应用(将具有很长的使用寿命)找到正确的解决方案。

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