N-channel 30 V, 6 mOhm typ., 11 A STripFET H6 Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 package

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  • This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    主要特性

    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

样片和购买

型号
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
Order from Distributors
Order from ST
STL11N3LLH6 PowerFLAT 3.3x3.3 Tape And Reel
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

STL11N3LLH6

Package

PowerFLAT 3.3x3.3

Packing Type

Tape And Reel

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技术文档

    • Description 版本 文档大小 Action
      DS6909
      N-channel 30 V, 6 mΩ typ., 11 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package
      3.0
      682.92 KB
      PDF
      DS6909

      N-channel 30 V, 6 mΩ typ., 11 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

    • Description 版本 文档大小 Action
      AN1506
      A motor drives system for wheelchair applications
      1.2
      139.23 KB
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      AN1703
      Guidelines for using ST's MOSFET smd Packages
      1.3
      776.65 KB
      PDF
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4192
      Power MOSFETs: best choice guide for VRM application
      1.0
      4.8 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN1506

      A motor drives system for wheelchair applications

      AN1703

      Guidelines for using ST's MOSFET smd Packages

      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4192

      Power MOSFETs: best choice guide for VRM application

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description 版本 文档大小 Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • Description 版本 文档大小 Action
      电源管理 2017版指南 09.2017
      4.42 MB
      PDF

      电源管理 2017版指南

型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STL11N3LLH6
Active
PowerFLAT 3.3x3.3 工业 Ecopack2

STL11N3LLH6

Package:

PowerFLAT 3.3x3.3

Material Declaration**:

Marketing Status

Active

Package

PowerFLAT 3.3x3.3

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.