This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Discover our low-voltage MOSFET portfolio, ranging from 12 V to 30 V, for a large diversity of industrial and automotive applications.
Explore our STripFET series of N-channel low voltage MOSFETs, with a breakdown voltage range from 12 V to 30 V.
|型号||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
RoHS Compliance Grade
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