N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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  • This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    主要特性

    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness

样片和购买

型号
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
Order from Distributors
Order from ST
STL160N4F7 PowerFLAT 5x6 Tape And Reel
Active
0.85 1000 EAR99 CHINA Check Availability

Distributor availability ofSTL160N4F7

代理商名称
地区 库存 最小订购量 Third party link
Farnell Element14 EUROPE 100 1 Order Now

代理商库存报告日期: 2019-05-22

代理商名称

Farnell Element14

库存

100

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-05-22

STL160N4F7

Package

PowerFLAT 5x6

Packing Type

Tape And Reel

Unit Price (US$)

0.85*

Distributor availability ofSTL160N4F7

代理商名称
地区 库存 最小订购量 Third party link
Farnell Element14 EUROPE 100 1 Order Now

代理商库存报告日期: 2019-05-22

代理商名称

Farnell Element14

库存

100

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-05-22

Marketing Status

Active

Unit Price (US$)

0.85

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技术文档

    • Description 版本 文档大小 Action
      DS11024
      N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
      2.0
      1.21 MB
      PDF
      DS11024

      N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

    • Description 版本 文档大小 Action
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4789
      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance
      1.1
      1,006.7 KB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4390
      ST’s MOSFET technologies for uninterruptible power supplies
      1.1
      1.22 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4789

      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description 版本 文档大小 Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

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      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
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      PDF
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      AEC-Q101 STripFET F7 MOSFETs for Automotive

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型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STL160N4F7
Active
PowerFLAT 5x6 工业 Ecopack2

STL160N4F7

Package:

PowerFLAT 5x6

Material Declaration**:

PDF XML

Marketing Status

Active

Package

PowerFLAT 5x6

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.