Dual N-channel 60 V, 0.023 Ohm typ., 36 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package

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  • 该双N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构,可降低通态电阻,同时降低内部电容和栅极电荷,从而使开关速度更快、能效更高。

    主要特性

    • 处于市面上最低的RDS(on) 行列
    • 出色的品质因数(FoM)
    • 较低的Crss/Ciss 比值使得其具有更强的抗EMI能力
    • 坚固的抗雪崩能力

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STL36DN6F7 PowerFLAT 5x6 double island Tape And Reel
Active
0.7 1000 EAR99 CHINA No availability of distributors reported, please contact our sales office

STL36DN6F7

封装

PowerFLAT 5x6 double island

包装类型

Tape And Reel

Unit Price (US$)

0.7*

供货状态

Active

Unit Price (US$)

0.7

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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开发工具硬件

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技术文档

    • 描述 版本 文档大小 操作
      DS11218
      Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package
      3.0
      889.34 KB
      PDF
      DS11218

      Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package

    • 描述 版本 文档大小 操作
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4789
      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance
      1.1
      1,006.7 KB
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      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4390
      ST’s MOSFET technologies for uninterruptible power supplies
      1.1
      1.22 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4789

      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STL36DN6F7 PSpice model 1.0
      10.24 KB
      ZIP

      STL36DN6F7 PSpice model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      776.14 KB
      PDF
      STPOWER™ STripFET F7 MOSFET for Industrial applications 1.0
      1.15 MB
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      Electric vehicle (EV) ecosystem 1.1
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      Electric vehicle (EV) ecosystem

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STL36DN6F7
Active
PowerFLAT 5x6 double island 工业 Ecopack2

STL36DN6F7

Package:

PowerFLAT 5x6 double island

Material Declaration**:

PDF XML

Marketing Status

Active

Package

PowerFLAT 5x6 double island

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.