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This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
主要特性
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
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开发工具硬件
产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
---|---|---|---|---|---|
STL19N60M2 | 批量生产 | PowerFLAT 8x8 HV | 工业 | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.