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STL19N60M2

批量生产
储存到myST

N-channel 600 V, 0.278 Ohm typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

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样片和购买
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快速链接

  • This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    主要特性

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STL19N60M2 PowerFLAT 8x8 HV Tape And Reel
批⁠量⁠生⁠产
- - EAR99 CHINA 查看供货情况

Distributor availability ofSTL19N60M2

代理商名称
地区 库存 最小订购量 Third party link
ARROW EUROPE 3000 0 Order Now
Newark Element14 AMERICA 747 0 Order Now
MOUSER WORLDWIDE 3100 1 Order Now
Farnell Element14 EUROPE 2098 1 Order Now

代理商库存报告日期: 2020-02-27

代理商名称

ARROW

库存

3000

Min.Order

0

地区

EUROPE Order Now

Newark Element14

库存

747

Min.Order

0

地区

AMERICA Order Now

MOUSER

库存

3100

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

2098

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2020-02-27

获取样片

STL19N60M2

封装

PowerFLAT 8x8 HV

包装类型

Tape And Reel
更多信息

单价(US$)

*

Distributor availability ofSTL19N60M2

代理商名称
地区 库存 最小订购量 Third party link
ARROW EUROPE 3000 0 Order Now
Newark Element14 AMERICA 747 0 Order Now
MOUSER WORLDWIDE 3100 1 Order Now
Farnell Element14 EUROPE 2098 1 Order Now

代理商库存报告日期: 2020-02-27

代理商名称

ARROW

库存

3000

Min.Order

0

地区

EUROPE Order Now

Newark Element14

库存

747

Min.Order

0

地区

AMERICA Order Now

MOUSER

库存

3100

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

2098

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2020-02-27

供货状态

批⁠量⁠生⁠产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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Mobile Applications

    • 产品型号
      STPOWER MOSFET Finder

      STPOWER MOSFET finder mobile app for tablets and smartphones

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技术文档

    • 描述 版本 文档大小 操作
      		DS11488
      N-channel 600 V, 0.278 Ω typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package       		3.0
      624.13 KB
      		PDF
      DS11488

      N-channel 600 V, 0.278 Ω typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

      PDF
    • 描述 版本 文档大小 操作
      		AN4250
      Fishbone diagram for power factor correction       		1.1
      772.32 KB
      		PDF
      		AN4829
      Fishbone diagrams for a forward converter       		1.1
      1.35 MB
      		PDF
      		AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection       		1.0
      1.4 MB
      		PDF
      		AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology       		1.0
      1.29 MB
      		PDF
      		AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies       		1.0
      652.78 KB
      		PDF
      		AN2842
      Paralleling of power MOSFETs in PFC topology       		1.4
      896.91 KB
      		PDF
      		AN2344
      Power MOSFET avalanche characteristics and ratings       		1.3
      880.04 KB
      		PDF
      		AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies       		1.0
      1.09 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN4250

      Fishbone diagram for power factor correction

      PDF
      AN4829

      Fishbone diagrams for a forward converter

      PDF
      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      PDF
      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      PDF
      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      PDF
      AN2842

      Paralleling of power MOSFETs in PFC topology

      PDF
      AN2344

      Power MOSFET avalanche characteristics and ratings

      PDF
      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products       		1.0
      657.71 KB
      		PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      		STL19N60M2 PSpice model 1.0
      9.68 KB
      		ZIP

      STL19N60M2 PSpice model

      ZIP

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      		PDF
      		500/650 V MDmesh™ M2 1.0
      1.03 MB
      		PDF
      		600/650 V MDmesh™ M2 1.0
      788.16 KB
      		PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      PDF

      500/650 V MDmesh™ M2

      PDF

      600/650 V MDmesh™ M2

      PDF
    • 描述 版本 文档大小 操作
      		Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      		PDF

      Electric vehicle (EV) ecosystem

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STL19N60M2
批量生产
PowerFLAT 8x8 HV Industrial Ecopack2

STL19N60M2

Package:

PowerFLAT 8x8 HV

Material Declaration**:

More Info

Marketing Status

批量生产

Package

PowerFLAT 8x8 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

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