Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package

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  • 该碳化硅功率MOSFET晶体管采用ST先进、创新的第二代碳化硅(SiC)MOSFET技术开发而成。器件具有每区域超低的导通状态电阻和卓越的开关性能。RDS(on) 和开关损耗的变化受工作结温的影响都非常小。

    主要特性

    • 专为汽车应用而设计
    • 导通电阻随温度变化敏感温度
    • 稳定的超快速本体二极管
    • 适应非常高的工作温度 (TJ = 200 °C)
    • 低电容

样片和购买

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供货状态
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SCTW100N65G2AG HIP247 Tube
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

SCTW100N65G2AG

封装

HIP247

包装类型

Tube

Unit Price (US$)

*

供货状态

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
SCTW100N65G2AG
Active
HIP247 汽车 Ecopack2

SCTW100N65G2AG

Package:

HIP247

Material Declaration**:

Marketing Status

Active

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.