STPOWER SiC MOSFET现在让创新型宽带隙材料(WBG)的优点惠及您的下一个设计。自2014年开始量产以来,意法半导体的SiC MOSFET提供扩展的电压范围(从650 - 1700 V,在不久的将来会更高),采用最先进的技术平台(具有优良开关性能),具有单位面积极低的导通电阻RDS(on) 和业界出色的品质因数(FoM)。由于意法半导体碳化硅专家的出色工作,配备ST SiC MOSFET的系统可以受益于其所达到的优良质量(几乎可与传统硅技术相媲美)。意法半导体的SiC MOSFET将允许您设计比以往任何时候更高效的紧凑型系统。
我们的STPOWER SiC MOSFET的主要特点和优势包括:
· 汽车级(AG)合格器件
· 超高温处理能力(max.TJ = 200 °C)
· 极低的开关损耗(随温度变化影响最小)允许工作在非常高的开关频率
· 在温度范围内具有低导通电阻
· 易于驱动
经过验证的超快速高可靠性本征体二极管
我们的STPOWER SiC MOSFET产品采用专门为汽车和工业应用设计的封装(HiP247、H2PAK-7、TO-247长引线、STPAK和HU3PAK)。

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- SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCTWA50N120-4 Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247-4 package
- SCT20N120H Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTW35N65G2V Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247 package
- SCTWA20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
- SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCTW70N120G2V Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCTL90N65G2V Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
- SCTWA90N65G2V-4 Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCT10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCT30N120H Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
- SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTW40N120G2V Silicon carbide Power MOSFET 1200 V, 36 A, 70 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCT50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT20N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTWA30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCT10N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCTWA90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
- SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
- SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
- SCTW90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTWA60N120G2-4 Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 60 A in an HiP247-4 package
- SCTWA60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
- SCTH90N65G2V-7 Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
- SCTWA10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
- SCT10N120H Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCTH70N120G2V-7 Silicon carbide Power MOSFET 1200 V, 90 A, 21 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT20N170 Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCT1000N170 Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
- SCTW100N65G2AG Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCTH35N65G2V-7 Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT1000N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
- SCT20N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., Tj = 25 C) in an HiP247 package
- SCTWA35N65G2V Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247 long leads package
- SCTH35N65G2V-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
- SCTL35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
- SCTWA35N65G2V-4 Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247-4 package