ST 的碳化硅MOSFET产品系列具有业界最高的200°C额定工作结温，显著降低了总功率损耗，令系统更有效、更小、更轻。 即使在高温时，它们也具有每区域超低的导通状态电阻，与最佳的硅技术相比，它们有卓越的开关性能，随温度变化最小。
主要特性：
- 业界最高的200°C额定工作结温（Tj max），增强了系统可靠性，降低了PCB尺寸（简化了热管理）
- 在高达200°C的整个温度范围内有低导通状态电阻，降低了对冷却的需求，具有更高的系统效率
- 降低开关损耗，随温度变化最小，设计更紧凑（无源元件更少）
- 低导通状态电阻（对于650 V设备，典型20 mΩ @ 25 °C；对于1200 V设备，典型80 mΩ @ 25 °C），系统效率更高（降低了对冷却的要求）
- 易于驱动
- 稳定的超快速本体二极管（无需外部续流二极管，从而进一步缩小了系统尺寸）
精选 视频
Key benefits of the Silicon Carbide technology in car electrification application
- SCT20N120H Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTW35N65G2V Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTWA20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
- SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCTW70N120G2V Silicon carbide Power MOSFET 650 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCT10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCT50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT20N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTWA30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCT10N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCTWA90N65G2V Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTW90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTH90N65G2V-7 Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
- SCTWA10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
- SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCTW100N65G2AG Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCTH35N65G2V-7 Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCTWA35N65G2V Silicon carbide Power MOSFET 650 V, 45 A, 75 mOhm (typ. TJ = 175 C) in an HiP247 long leads package
- SCTH35N65G2V-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
