使用STPOWER SiC MOSFET创建比以往更高效、更紧凑的系统
借助STPOWER SiC MOSFET,将创新宽带隙材料(WBG)的优势融入下一个设计。意法半导体的碳化硅MOSFET具有650 V至1700 V的扩展电压范围,是最先进的技术平台之一,具有出众的开关性能和极低的单位面积导通电阻。
我们的STPOWER SiC MOSFET的主要特点包括:
- 汽车级(AG)合格器件
- 超高温处理能力(max.TJ = 200 °C)
- 超高开关工作频率和极低开关损耗
- 低导通状态电阻
- 栅极驱动可兼容现有IC
- 稳定的超快速本体二极管
我们的STPOWER SiC MOSFET产品组合包括最先进的封装(HiP247、H2PAK-7、TO-247长引线、STPAK和HU3PAK),专为满足汽车和工业应用的严格要求而设计。
![]() | 除了最新封装技术,我们的SiC MOSFET(包括G3器件)还可采用裸露晶片形式。符合最严格的汽车级要求(包括晶圆级老化(WLBI)和已知良好晶片(KGD)过程),裸露晶片可采用重构晶圆或卷盘封装。 查看我们的SiC创新和技术页面。 |

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