STPOWER SiC MOSFET现在让创新型宽带隙材料（WBG）的优点惠及您的下一个设计。自2014年开始量产以来，意法半导体的SiC MOSFET提供扩展的电压范围（从650 - 1700 V，在不久的将来会更高），采用最先进的技术平台（具有优良开关性能），具有单位面积极低的导通电阻RDS(on) 和业界出色的品质因数（FoM）。由于意法半导体碳化硅专家的出色工作，配备ST SiC MOSFET的系统可以受益于其所达到的优良质量（几乎可与传统硅技术相媲美）。意法半导体的SiC MOSFET将允许您设计比以往任何时候更高效的紧凑型系统。
我们的STPOWER SiC MOSFET的主要特点和优势包括：
- 汽车级（AG）合格器件
- 超高温处理能力（max.TJ = 200 °C）
- 极低的开关损耗（随温度变化影响最小）允许工作在非常高的开关频率
- 在温度范围内具有低导通电阻
- 易于驱动
- 稳定的超快速本体二极管
我们的STPOWER SiC MOSFET产品采用专门为汽车和工业应用设计的先进封装（HiP247、H2PAK-7、TO-247长引线、STPAK和HU3PAK)。
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Key benefits of the Silicon Carbide technology in car electrification application
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SCTW100N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCTWA50N120-4
Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247-4 package
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SCT20N120H
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTW35N65G2V
Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247 package
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SCTWA20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
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SCTWA50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
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SCTW70N120G2V
Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCTL90N65G2V
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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SCTWA90N65G2V-4
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
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SCTW40N120G2VAG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCT10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCT30N120H
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
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SCTW35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTW40N120G2V
Silicon carbide Power MOSFET 1200 V, 36 A, 70 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
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SCTH100N65G2-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT20N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
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SCT10N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCTWA90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
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SCTW60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
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SCTW90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTH90N65G2V-7
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
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SCTWA10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
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SCT10N120H
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCTH70N120G2V-7
Silicon carbide Power MOSFET 1200 V, 90 A, 21 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCTH40N120G2V7AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT20N170
Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCT1000N170
Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
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SCTW100N65G2AG
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCTH35N65G2V-7
Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT1000N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
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SCT20N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., Tj = 25 C) in an HiP247 package
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SCTWA35N65G2V
Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247 long leads package
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SCTH35N65G2V-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
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SCTL35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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SCTWA35N65G2V-4
Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247-4 package
