ST 的碳化硅MOSFET产品系列具有业界最高的200°C额定工作结温，显著降低了总功率损耗，令系统更有效、更小、更轻。 即使在高温时，它们也具有每区域超低的导通状态电阻，与最佳的硅技术相比，它们有卓越的开关性能，随温度变化最小。
主要特性：
- 业界最高的200°C额定工作结温（Tj max），增强了系统可靠性，降低了PCB尺寸（简化了热管理）
- 在高达200°C的整个温度范围内有低导通状态电阻，降低了对冷却的需求，具有更高的系统效率
- 降低开关损耗，随温度变化最小，设计更紧凑（无源元件更少）
- 低导通状态电阻（对于650 V设备，典型20 mΩ @ 25 °C；对于1200 V设备，典型80 mΩ @ 25 °C），系统效率更高（降低了对冷却的要求）
- 易于驱动
- 稳定的超快速本体二极管（无需外部续流二极管，从而进一步缩小了系统尺寸）
精选 视频
Key benefits of the Silicon Carbide technology in car electrification application
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SCTW100N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCT20N120H
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTW35N65G2V
Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTWA20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
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SCTWA50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
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SCTW70N120G2V
Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
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SCTW40N120G2VAG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCT10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCTW35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
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SCTH100N65G2-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT20N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
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SCT10N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCTWA90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
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SCTW60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTW90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTH90N65G2V-7
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
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SCTWA10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
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SCTH40N120G2V7AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT1000N170
Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
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SCTW100N65G2AG
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCTH35N65G2V-7
Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT1000N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
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SCT20N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., Tj = 25 C) in an HiP247 package
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SCTWA35N65G2V
Silicon carbide Power MOSFET 650 V, 45 A, 75 mOhm (typ. TJ = 175 C) in an HiP247 long leads package
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SCTH35N65G2V-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
