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Solution Description

The SL-DPSLLKCK1 is a digitally controlled full bridge LLC resonant DC-DC converter with output synchronous rectification.

The digital control stage is based on the STM32F334 microcontroller with high resolution timer for fine regulation of the control loop, USART, CAN and SMBus outputs to communicate status information for monitoring, and opto-coupled serial communication suitable for integration with a PFC front-end rectifier.

In the power stage, the full bridge primary section of the LLC converter is based on the STW70N60DM2 MDmesh™ DM2 Power MOSFET for high efficiency performance, driven by the highly integrated and high current L6491 half bridge gate driver

Synchronous rectification (SR) in full bridge topology  with STP310N10F7 STripFET™ F7 Power MOSFETs is employed on the secondary side of the LLC converter to reduce conduction losses.

Both the primary and secondary sections are supplied by a flyback circuit based on VIPer27HD, which provides regulated voltages to the control board, the gate driver ICs and the signal conditioning circuits.

The solution includes a complete FW application example

  • Key Product Benefits

    STM32F469AI - high performance MCU

    The STM32F3x4 product line specifically addresses digital power conversion applications, including D-SMPS. It features an Arm® Cortex®-M4 32-bit core operating at up to 72 MHz frequency, a floating point unit (FPU), a high-resolution timer capable of 217ps resolution, self-compensated versus power supply and temperature drift, high-speed ADCs for precise and accurate control, and an assortment of analog interfaces for protection and signal conditioning.

    STW70N60DM2 - high voltage Power MOSFET

    This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers excellent behavior in terms of turn-off energy (Eoff) especially at high currents, as well as a low gate charge, low input capacitance and its intrinsic diode shows very short recovery time, rendering it suitable for the most demanding high efficiency converters and ideal for resonant topologies such as the LLC resonant converter.

    STP310N10F7 - low voltage Power MOSFET

    o This low voltage N-channel Power MOSFET implements 7th generation ST proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits among the lowest RDS(on) in all packages, coupled with minimal capacitances and gate charge. The STP310N10F7 allows system power and efficiency targets to be met using fewer devices in small package sizes.

     

    VIPER27HD - high voltage converter

    The device is a high voltage converter integrating an 800 V rugged Power MOSFETs, state-of-art PWM control, and a comprehensive set of features and built-in protections, ideal for implementing an auxiliary SMPS that is able to meet the most demanding energy-saving regulations with high reliability, flexibility and reduced number of components. The H version offers PWM control at 115kHZ fixed switching frequency with jittering to allow transformer size reduction

    L6491 - half-bridge gate driver

    The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs. The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing. An integrated comparator is available for fast protection against overcurrent, overtemperature, etc.

  • 所有功能

    • Input DC voltage: 375 V to 425 V
    • Output voltage: 48 V
    • Maximum output current: 62.5 A
    • Output power: 3 kW
    • HF transformer isolation voltage: 4 kV
    • Max DC-DC switching frequency: 380 kHz (at startup)
    • Closed loop switching frequency: 120 kHz to 250 kHz
    • Resonant frequency: 175 kHz
    • Adaptive synchronous rectification
    • Undervoltage and overvoltage protection on input and output
    • Overtemperature protection
    • Short-circuit protection
    • Light load burst mode
    • Forced cooling with air flow speed modulation according to the output power and temperature