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ST航空级系列二极管包括肖特基二极管 (1N58xx、STPSx) 和双极型二极管(1N66xx、BYXxx)。 这些器件在许多应用环境中具有极为优异的性能,最高反向电压200 V,最大正向电流40 A。 该系列产品采用TO-254、SMD.5、LCC-2B、LCC-2A和LCC-2D封装。

New Generation of Power Diodes for Space

With enhanced electrical performance, extended product range and guaranteed radiation hardness, ST's new generation of high-reliability Schottky diodes and rectifiers are ideal for the design of robust space solutions and other applications working in harsh environments. Housed in a variety of hermetic packages, these radiation-hardened devices are all qualified under the ESCC system.

The 150 V, 60 A STPS60A150C and 150V, 80A STPS80A150C Power Schottky diodes housed in an SMD.5 package are SEB (Single Effect Burnout) Schottky rectifiers immune up to 60 MeV.Cm2/mg. Their through-hole counterpart, the 150 V, 40 A STPS40A150CHR, available in a TO-254AA package, is now ESCC qualified with the April 2020 release of the ESCC QPL (Qualified Part List).

2 additional 45 V rad-hard power Schottky diodes have also just been ESCC qualified: The 45 V, 80 A STPS80A45CHR in an SMD.5 package and the 45 V, 40 A STPS40A45CHR in a TO-254AA package.

Three ESCC-qualified fast recovery rectifiers support the need for 200 and 400 V diodes: up to 40 A with the STTH40200CHR in a TO-254AA package and up to 60 A with the STTH60200CHR and STTH60400HR in SMD1 packages.

All these products feature the best-in-class forward voltage drop (VF) at 125°C, at nominal current and at up to 3 other forward currents (IF) per diode, making it possible to take full advantage of the low VF, regardless of the actual current in the application. All Power Schottky diodes have a guaranteed maximum dV/dt of 10 kV/µs.

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