A Showcase of the STPOWERTM Family for New Alternative Energies
The SLIMMTM Family of Intelligent Power Modules (IPMs) connect directly to the microcontroller and provide the complete power stage for a 3-phase motor drive. They greatly reduce costs by simplifying design and significantly reducing component count while saving space, improving reliability and lowering EMI. They are available in both through-hole and surface-mount configurations with MOSFET, IGBT and Super Junction devices.
ACEPACKTM1 and ACEPACKTM2 Power Modules include Six-pack and CIB (converter +inverter + brake) topologies from 3 to 30kW for industrial power applications including industrial motor drives, solar panels, welding tools, and power-management solutions. Thanks to their high configuration flexibility, these robust power modules can implement other topologies on different IGBT, MOSFET and SiC power switching applications.
The new GaN devices enlarge the family of Wide Band Gap Power Semiconductors beyond SiC. The first ST GaN Intrinsically Normally-OFF HEMT demonstrates how this technology improves power density and efficiency of very-high-frequency designs in high Voltage Power Conversion. The panel features SGT120R65AL 120mohm 650V in PowerFlat QFN Lead options (through-hole and SMD).
ACEPACKTM Drive high-power module and isolated gate drivers, like the STGAP provide full solution for EV Traction Inverter. The ADP860120W2-F ACEPACK™ DRIVE module is a Silicon CarbidePower MOSFET Sixpack, 1200V, 860A with NTC. The STGAP1AS is a galvanic isolated single-gate driver for N-channel MOSFETs and IGBTs with advanced protection, configuration and diagnostic features. With up to 5A drive capability, the STGAP1AS isolates the gate drive from the control and the low-voltage interface circuitry through true galvanic isolation.
ACEPACKTM SMIT is a scalable solution for a single switch in a traction inverter. The copper top side provides an isolated path for heat transfer. The traction inverter displayed uses several 200A 650V IGBTs in 3-phase inverter.
The new STPAKTM improves power dissipation and reduces inductance. The demo displays water cooling in direct contact with the package heatsink. The package uses sintering technology inside for the die attach and outside for mounting on the heatsink, reducing the thermal path and interface for best power dissipation!
Isolated Gate Driver
Enphase microinverter is powered by MDmesh M6
Digital Power Control with STM32,
Data Center Power Delivery
Compact Inrush Current Limiter
BLDC Motor Position Control
Wireless Fast Charge
|Session||APEC ID/ |
|Tuesday||8:30||Efficiency & Robustness for SiC MOSFETs: key role, trade-off and technology improvement for traction inverter solutions||Mario Pulvirenti||Industry session||IS03||210A|
|9:00||A 3kW Full Bridge LLC Resonant Digital Converter for Industrial/telecom application||Mario Di-Guardo||Industry Session||IS02||209AB|
|10:00||Solid State Inrush Current Control Solutions for Single Phase PFC||Yannick Hague||Industry Session||IS02||209AB|
|11:00||SiCon Carbide Enabling Car Electrification (SiC vs IGBT in Traction Inverter)||Anselmo Gianlìuca Liberti||Industry Session||IS03||210A|
|2:15||Flexible Architectures to Efficiently Convert from 48V to Intermediate Bus or Directly to POL||Paolo Sandri||Exhibitor Session|
|Wednesday||9:15||Adaptive Digital Synchronous Rectification for power supply||Ivan Clemente Massimiani||Industry Session||IS07||209AB|
|9:30||Qi power control principles and consequences on PTx design||Lionel Cimaz||Industry Session||IS10||213B|
|2:20||Innovative control method for a Dual Independent Output LLC resonant converter||Alberto Bianco||Technical Session||T18.2||212AB|
|Thursday||8:30||How SiC MOSFETs Enhance Efficiency, Reliability, and Performance of Electric Vehicle||Jeffrey Fedison||Industry Session||IS16||209AB|
|10:00||SiC MOSFET or Si IGBT in Industrial Motor Drives||Mario Pulvirenti||Industry Session||IS17||210D|
|10:00||A 5kW Inverter solution for low voltage application||Genmaro Macina||Industry Session||IS20||213B|
|10:30||An experimental investigation of the SiC MOSFET gate voltage glitches with Miller clamp||Anselmo Gianlìuca Liberti||Industry Session||IS17||210D|
|11:15||A Novel Non-Complementary Active Clamp Flyback Control Technique||Alberto Bianco||Technical Session||Poster||Poster Area|