STPSC10H065-Y

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Automotive 650V, 10 A Silicon Carbide diode

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Product overview

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

  • All features

    • AEC-Q101 qualified
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Dedicated to PFC applications
    • High forward surge capability
    • PPAP capable
    • ECOPACK®2 compliant component

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC10H065-Y

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STPSC10H065GY-TR
Active
D2PAK Automotive Ecopack2

STPSC10H065GY-TR

Package:

D2PAK

Material Declaration**:

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Marketing Status

Active

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STPSC10H065GY-TR
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STPSC10H065GY-TR Active

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Part Number:

STPSC10H065GY-TR

Operating Temperature (°C)

Min:

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Junction Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors