2STA1943

Obsolete
Design Win

High power PNP epitaxial planar bipolar transistor

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Product overview

Description

This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
  • All features

    • High breakdown voltage VCEO > -230V
    • Fast-switching speed
    • Complementary to 2STC5200
    • Typical fT= 30MHz

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STMicroelectronics - 2STA1943

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