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ST’s ESBTs consist of a high-voltage power bipolar transistor connected in cascade with a low-voltage power MOSFET, and are ideal for high-efficiency fast switching applications such as 3-phase auxiliary power supplies. They are available with collector-source voltage ranging from 1700 V up to 2200 V.

Key features include:

  • Very low equivalent on-resistance to minimize conduction losses
  • Very low switching times for efficient operation over 100 kHz
  • Squared RBSOA to sustain accidental overloads

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