Design Win

Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package

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Product overview


This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • All features

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Source sensing pin for increased efficiency
    • Very high operating junction temperature capability (TJ = 200 °C)

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTWA35N65G2V4AG

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3D model

3D models