Design Win

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package

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Product overview


This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • All features

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Low capacitance

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTWA35N65G2VAG

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3D model

3D models