SGT120R65AL

Obsolete
Design Win

650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

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Product overview

Description

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

  • All features

    • Enhancement mode normally off transistor
    • Very high switching speed
    • High power management capability
    • Extremely low capacitances
    • Kelvin source pad for optimum gate driving
    • Zero reverse recovery charge

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SGT120R65AL

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