SGT120R65AL

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Design Win

650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

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Product overview

Description

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

  • All features

    • Enhancement mode normally off transistor
    • Very high switching speed
    • High power management capability
    • Extremely low capacitances
    • Kelvin source pad for optimum gate driving
    • Zero reverse recovery charge

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EDA Symbols, Footprints and 3D Models

STMicroelectronics - SGT120R65AL

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SGT120R65AL
Active
POWERFLAT 5X6 HV FOR POWERGAN Industrial Ecopack2

SGT120R65AL

Package:

POWERFLAT 5X6 HV FOR POWERGAN

Material Declaration**:

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Marketing Status

Active

Package

POWERFLAT 5X6 HV FOR POWERGAN

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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SGT120R65AL
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SGT120R65AL Active

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RoHS:
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Part Number:

SGT120R65AL

Operating Temperature (°C) (max):

150

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors