Product overview
Description
The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
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All features
- Enhancement mode normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving
- Zero reverse recovery charge
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SGT120R65AL
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All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 3.0 | 23 Feb 2022 | 23 Feb 2022 |