STB11NM80

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Design Win

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package

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Product overview

Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

  • All features

    • Low input capacitance and gate charge
    • Low gate input resistance
    • Best RDS(on)*Qg in the industry

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STB11NM80

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STB11NM80T4
Active
D2PAK Industrial Ecopack2

STB11NM80T4

Package:

D2PAK

Material Declaration**:

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Marketing Status

Active

Package

D2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STB11NM80T4
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STB11NM80T4 Active

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STB11NM80T4

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors