STB36NM60N

NRND
Design Win

Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package

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Product overview

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

  • All features

    • Designed for automotive applications and AEC-Q101 qualified
    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STB36NM60N

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STB36NM60N
NRND
D2PAK Automotive Ecopack1

STB36NM60N

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors