STB45NF06

NRND
Design Win

N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package

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Product overview

Description

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

  • All features

    • Typical RDS(on)= 0.022 Ω
    • Exceptional dv/dt capability
    • 100% avalanche tested
    • Standard threshold drive

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STB45NF06

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STB45NF06T4
NRND
D2PAK Automotive Ecopack1 (*)

STB45NF06T4

Package:

D2PAK

Material Declaration**:

Marketing Status

NRND

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1 (*)

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STB45NF06T4
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STB45NF06T4 NRND

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Package:
Packing Type:
RoHS:
Country of Origin:
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ECCN (EU):

Part Number:

STB45NF06T4

Operating Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors