This Power MOSFET is the latest development of STMicroelectronis unique \"Single Feature SizeTM\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- TYPICAL RDS(on) = 0.01 Ω
- LOW GATE CHARGE
- OPTIMIZED FOR HIGH SWITCHING OPERATIONS
- LOGIC LEVEL GATE DRIVE
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