STD11NM60ND

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Design Win

N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a DPAK package

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Product overview

Description

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

  • All features

    • Fast-recovery body diode
    • Low gate charge and input capacitance
    • Low on-resistance RDS(on)
    • 100% avalanche tested
    • High dv/dt ruggedness

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STD11NM60ND

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STD11NM60ND
Active
DPAK Industrial Ecopack2

STD11NM60ND

Package:

DPAK

Material Declaration**:

Marketing Status

Active

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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