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  • This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key Features

    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

Mobile Applications

    • Part Number

      STPOWER MOSFET finder mobile app for tablets and smartphones

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS11369
      N-channel 40 V, 2.5 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package
      2.0
      769.49 KB
      PDF
      DS11369

      N-channel 40 V, 2.5 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package

    • Description Version Size Action
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4390
      ST’s MOSFET technologies for uninterruptible power supplies
      1.1
      1.22 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STD180N4F6 PSpice model 1.0
      9.81 KB
      ZIP

      STD180N4F6 PSpice model

Publications and Collaterals

    • Description Version Size Action
      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      PDF
      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      743.73 KB
      PDF
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      PDF
      STPOWER™ STripFET F7 MOSFET for Industrial applications 1.0
      1.15 MB
      PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      ST MOSFET Finder, the new app for Android and iOS

      STPOWER™ STripFET F7 MOSFET for Industrial applications

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STD180N4F6
NRND
DPAK Industrial Ecopack2

STD180N4F6

Package:

DPAK

Material Declaration**:

Marketing Status

NRND

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
Order from Distributors
Order from ST
Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
STD180N4F6 No availability of distributors reported, please contact our sales office Buy now
NRND
EAR99 NEC Tape And Reel DPAK - - CHINA

STD180N4F6

Marketing Status

NRND

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

Packing Type

Tape And Reel

Package

DPAK

Operating Temperature (°C)

(min)

-

(max)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors