The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
- Very low collector to emitter saturation voltage
- Fast-switching speed
- High current gain characteristic
- Through-hole IPAK (TO-251) power package in tube (suffix “-1”)
- Surface-mounting DPAK (TO-252) power package in tape& reel (suffix “T4)
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