STD2NK60Z-1

Obsolete
Design Win

N-channel 600 V, 7.2 Ohm, 1.4 A Zener-protected SuperMESH(TM) MOSFET in a IPAK package

Download datasheet

Product overview

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS-FETs including revolutionary MDmesh™ products.

  • All features

    • GATE CHARGE MINIMIZED
    • TYPICAL RDS(on) = 7.2 Ω
    • ESD IMPROVED CAPABILITY
    • EXTREMELY HIGH dv/dt CAPABILITY
    • NEW HIGH VOLTAGE BENCHMARK
    • 100% AVALANCHE TESTED

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STD2NK60Z-1

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

Symbols

Footprints

Footprints

3D model

3D models