These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
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Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from Distributors||Order from ST||Package||Packing Type||Marketing Status||ECCN (US)||Country of Origin||Budgetary Price (US$)*/Qty|
|STD7NM80-1|| 3 distributors |
Distributor availability ofSTD7NM80-1
Distributor reported inventory date: 2020-07-13
Budgetary Price (US$)*/Qty
Budgetary Price (US$)* / Qty
Country of Origin