Product overview
Description
The device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in dual-island DIP-8 package with separated terminals to provide a high degree of assembly flexibility.
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All features
- Low VCE(sat)
- Simplified circuit design
- Reduced component count
- Fast switching speed
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STMicroelectronics - STD845DN40
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