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These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | ECCN (US) | Country of Origin | Budgetary Price (US$)*/Qty | Order from ST | Order from Distributors |
|---|---|---|---|---|---|---|---|---|
| STF10P6F6 | TO-220FP | Tube | NRND | EAR99 | CHINA | 0.88 / 1k | Check Availability |
STF10P6F6
Package
TO-220FPPacking Type
TubeBudgetary Price (US$)*/Qty
0.88 / 1k(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STF10P6F6 | NRND | TO-220FP | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
