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These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
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Product Specifications (1)
Resource title | Latest update | |||
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13 Oct 2016 |
13 Oct 2016
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Application Notes (1)
Resource title | Latest update | |||
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13 Sep 2018 |
13 Sep 2018
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User Manuals (1)
Resource title | Latest update | |||
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21 Oct 2016 |
21 Oct 2016
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Flyers (1)
Resource title | Latest update | |||
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08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|
STF10P6F6 |
NRND
|
TO-220FP | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|
min | max | |||||||||||
STF10P6F6 | 2 distributors |
NRND
|
EAR99 | NEC | Tube | TO-220FP | - | - | CHINA | 0.88 / 1k |
Marketing Status
NRNDECCN (US)
EAR99Budgetary Price (US$)*/Qty
0.88 / 1k(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors