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  • This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key Features

    • Among the lowest RDS(on)on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Cissratio for EMI immunity
    • High avalanche ruggedness

Sample & Buy

Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
Order from Distributors
Order from ST
STF150N10F7 TO-220FP Tube
Active
2.5 1000 EAR99 CHINA No availability of distributors reported, please contact our sales office

STF150N10F7

Package

TO-220FP

Packing Type

Tube

Unit Price (US$)

2.5*

Marketing Status

Active

Unit Price (US$)

2.5

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Development Tools

    • Part Number

      MOSFET product finder application for Android and iOS

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS10140
      N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package
      2.0
      775.77 KB
      PDF
      DS10140

      N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package

    • Description Version Size Action
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4789
      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance
      1.1
      1,006.7 KB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4390
      ST’s MOSFET technologies for uninterruptible power supplies
      1.1
      1.22 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4789

      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

Publications and Collaterals

    • Description Version Size Action
      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      776.14 KB
      PDF
      STPOWER™ STripFET F7 MOSFET for Industrial applications 1.0
      1.15 MB
      PDF

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      STPOWER™ STripFET F7 MOSFET for Industrial applications

    • Description Version Size Action
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STF150N10F7
Active
TO-220FP Industrial Ecopack2

STF150N10F7

Package:

TO-220FP

Material Declaration**:

Marketing Status

Active

Package

TO-220FP

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.