The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
- Reduced switching losses
- Lower RDS(on) per area vs previous generation
- Low gate input resistance
- 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
The MDmesh M6 MOSFET series (600 V to 700 V) opens the door to power converter designers for new scenarios targeting high efficiency and power density.
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|TO-220FP wide creepage||Industrial||Ecopack2||
Package:TO-220FP wide creepage
TO-220FP wide creepage
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.