N-channel 60 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAKFP package

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  • This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

    Key Features

    • Fully insulated and low profile package with increased creepage path from pin to heatsink plate
    • Low gate charge
    • Very low on-resistance
    • High avalanche ruggedness

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Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
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STFI260N6F6 I2PAKFP Tube
NRND
- EAR99 - No availability of distributors reported, please contact our sales office Buy now

STFI260N6F6

Package

I2PAKFP

Packing Type

Tube

Unit Price (US$)

*

Marketing Status

NRND

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

-

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS9006
      N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package
      1.1
      652.45 KB
      PDF
      DS9006

      N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package

    • Description Version Size Action
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4390
      ST’s MOSFET technologies for uninterruptible power supplies
      1.1
      1.22 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      TN0885
      New I2PAKFP (TO-281) package, practical approach for compact and slim product design needs
      1.0
      417.6 KB
      PDF
      TN0885

      New I2PAKFP (TO-281) package, practical approach for compact and slim product design needs

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

Publications and Collaterals

    • Description Version Size Action
      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      776.14 KB
      PDF
      STPOWER™ STripFET F7 MOSFET for Industrial applications 1.0
      1.15 MB
      PDF

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      STPOWER™ STripFET F7 MOSFET for Industrial applications

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STFI260N6F6
NRND
I2PAKFP Industrial Ecopack2

STFI260N6F6

Package:

I2PAKFP

Material Declaration**:

Marketing Status

NRND

Package

I2PAKFP

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.