STG10M65F2D7

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Trench gate field-stop, 650 V, 10 A, low-loss M series IGBT die in D7 packing

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

  • All features

    • 6 μs of short-circuit withstand time
    • Low VCE(sat) = 1.55 V (typ.) @ IC = 10 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C

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STMicroelectronics - STG10M65F2D7

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Quality and Reliability

Part Number Marketing Status Grade Material Declaration**
STG10M65F2D7
Active
Industrial

STG10M65F2D7

Package:

Industrial

Material Declaration**:

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Marketing Status

Active

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STG10M65F2D7 Available at distributors

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EAR99 NEC Not Applicable D.SCRIB.100% VI STAT - - CHINA

STG10M65F2D7 Active

Package:
D.SCRIB.100% VI STAT
ECCN (US):
EAR99

Part Number:

STG10M65F2D7

ECCN (EU):

NEC

Packing Type:

Not Applicable

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors