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1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D8 packing

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Product overview


This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

  • All features

    • 10 μs of short-circuit withstand time
    • Low VCE(sat) = 1.85 V (typ.) at IC = 15 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Minimized junction temperature: TJ = 175 °C

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STMicroelectronics - STG15M120F3D8

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