Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
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All features
- 6 µs of minimum short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
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STMicroelectronics - STG30M65F2D7
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Temperature (°C) | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STG30M65F2D7 | | | distributors No availability of distributors reported, please contact our sales office | D.SCRIB.100% VI STAT | Not Applicable | CHINA | EAR99 | NEC | -55 | 175 | -55 | |||
STG30M65F2D7 Active
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