STG50M170F3D7

Obsolete
Design Win

Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

  • All features

    • Low VCE(sat) = 2 V (typ.) @ IC = 50 A
    • 10 μs of short-circuit withstand time
    • Minimized tail current
    • Tight parameter distribution
    • Positive VCE(sat) temperature coefficient

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STMicroelectronics - STG50M170F3D7

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