STG50M65F2D7

Obsolete
Design Win

650 V, 50 A trench gate field-stop M series low-loss IGBT die in D7 packing

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • All features

    • 6 µs of short-circuit withstand time
    • Low VCE(sat) = 1.65 V (typ.) @ IC = 50 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C

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STMicroelectronics - STG50M65F2D7

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