Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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All features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 80 A
- Tight parameter distribution
- Safer paralleling
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STMicroelectronics - STG80H65FBD7
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| STG80H65FBD7 | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Not Applicable | D.SCRIB.100% VI STAT | - | - | SINGAPORE | | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors