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650 V, 80 A trench gate field-stop HB series high-speed IGBT die in D7 packing

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Product overview


This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High-speed switching series
    • Minimized tail current
    • VCE(sat) = 1.6 V (typ.) @ IC = 80 A
    • Tight parameter distribution
    • Safer paralleling

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STMicroelectronics - STG80H65FBD7

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