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Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
Key Features
- HIGH VOLTAGE CLAMPING FEATURE
- POLYSILICON GATE VOLTAGE DRIVEN
- LOW ON-VOLTAGE DROP
- LOW THRESHOLD VOLTAGE
- HIGH CURRENT CAPABILITY
- LOW GATE CHARGE
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Eoff (mJ) (typ) (@ Tc=125 °C) | PTOT (W) (max) | ECCN (US) | Country of Origin | Approximate Price (US$)* / Qty | Order from ST | Order from Distributors |
|---|---|---|---|---|---|---|---|---|---|---|
| STGB20NB41LZT4 | D2PAK | Tape And Reel | Active | 18.4 | 200 | EAR99 | CHINA | 4.03 / 1k | Buy now | Check Availability |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STGB20NB41LZT4 | Active | D2PAK | Automotive | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
