Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
- HIGH VOLTAGE CLAMPING FEATURE
- POLYSILICON GATE VOLTAGE DRIVEN
- LOW ON-VOLTAGE DROP
- LOW THRESHOLD VOLTAGE
- HIGH CURRENT CAPABILITY
- LOW GATE CHARGE
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