Product overview
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.-
All features
- HIGH VOLTAGE CLAMPING FEATURE
- POLYSILICON GATE VOLTAGE DRIVEN
- LOW ON-VOLTAGE DROP
- LOW THRESHOLD VOLTAGE
- HIGH CURRENT CAPABILITY
- LOW GATE CHARGE
Featured Videos
All tools & software
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGB20NB41LZ
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STGB20NB41LZT4 |
Active
|
D2PAK | Automotive | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Eoff (mJ) (typ) (@ Tc=125°C) | PTOT (W) (max) | Country of Origin | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGB20NB41LZT4 | 1 distributors | Buy Direct |
Active
|
EAR99 | NEC | Tape And Reel | D2PAK | -55 | 175 | 18.4 | 200 | CHINA | 1.65 / 1k | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
