This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.55 V(typ.) @ IC = 30 A
- Safe paralleling
- Tight parameter distribution
- Low thermal resistance
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|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package||D2PAK||Industrial||Ecopack2|| |
Package:Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package
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