This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 μs short-circuit withstand time
- Very fast soft recovery antiparallel diode
- Lead free package
Recommended for you
|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|60 A, 650 V field stop trench gate IGBT with very fast diode||TO-247||Industrial||Ecopack2|| |
Package:60 A, 650 V field stop trench gate IGBT with very fast diode
60 A, 650 V field stop trench gate IGBT with very fast diode
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.