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Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

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Product overview


This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ= 175 °C
    • Tail-less switching off
    • VCE(sat)= 1.85 V (typ.) @ IC= 80 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

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STMicroelectronics - STGW80V60DF

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