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The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Key Features
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V(typ.) @ IC = 100 A
- Very fast and soft recovery co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
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Product Specifications (1)
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| 26 Sep 2020 |
26 Sep 2020
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Application Notes (3)
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| 30 Jan 2019 |
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Flyers (3)
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| 22 May 2020 |
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA100H65DFB2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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HW Model, CAD Libraries & SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 22 Apr 2020 |
22 Apr 2020
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWA100H65DFB2 |
Active
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Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package | TO-247 long leads | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGWA100H65DFB2 | 1 distributors |
Active
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EAR99 | NEC | Tube | TO-247 long leads | - | - | CHINA | Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package | 5.0 / 1k | |||
Marketing Status
ActiveECCN (US)
EAR99Budgetary Price (US$)*/Qty
5.0 / 1k(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
