Trench gate field-stop 650 V, 30 A high speed HB series IGBT

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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    Key Features

    • Maximum junction temperature: TJ = 175 °C
    • High-speed switching series
    • Minimized tail current
    • VCE(sat) = 1.55 V(typ) @ IC = 30 A
    • Safe paralleling
    • Tight parameter distribution
    • Low thermal resistance

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Budgetary Price (US$)*
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ECCN (US)
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STGWA30H65FB TO-247 long leads Tube
Active
- - EAR99 CHINA Trench gate field-stop 650 V, 30 A high speed HB series IGBT Check Availability

Distributor availability ofSTGWA30H65FB

Distributor Name
Region Stock Min. Order Third party link
MOUSER WORLDWIDE 600 1 Order Now

Distributor reported inventory date: 2019-12-06

Distributor Name

MOUSER

Stock

600

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2019-12-06

Get sample

STGWA30H65FB

Package

TO-247 long leads

Packing Type

Tube

Unit Price (US$)

*

Distributor availability ofSTGWA30H65FB

Distributor Name
Region Stock Min. Order Third party link
MOUSER WORLDWIDE 600 1 Order Now

Distributor reported inventory date: 2019-12-06

Distributor Name

MOUSER

Stock

600

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2019-12-06

Marketing Status

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

General Description

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS12134
      Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package
      1.0
      746.62 KB
      PDF
      DS12134

      Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package

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      AN4694
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      1.0
      2.13 MB
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      AN4544
      IGBT datasheet tutorial
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      AN5277
      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment
      1.0
      1.08 MB
      PDF
      AN4694

      EMC design guides for motor control applications

      AN4544

      IGBT datasheet tutorial

      AN5277

      Introduction to the new fast 650 V HB2 IGBT series on a two‑switch forward welding equipment

Publications and Collaterals

    • Description Version Size Action
      650V HB series IGBTs; Innovative 4-lead package 1.0
      1.67 MB
      PDF
      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies 1.0
      290.2 KB
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      ST IGBT Finder, get the right IGBT for your application with a touch of your screen 1.0
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      650V HB series IGBTs; Innovative 4-lead package

      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies

      ST IGBT Finder, get the right IGBT for your application with a touch of your screen

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGWA30H65FB
Active
Trench gate field-stop 650 V, 30 A high speed HB series IGBT TO-247 long leads Industrial Ecopack2

STGWA30H65FB

Package:

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

Package

TO-247 long leads

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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