Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.-
All features
- Maximum junction temperature: TJ= 175 °C
- Tail-less switching off
- VCE(sat)= 1.85 V (typ.) @ IC= 80 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
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Product Specifications (1)
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| 19 Sep 2016 | 19 Sep 2016 |
Application Notes (3)
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| 19 Mar 2021 | 19 Mar 2021 | |||
| 19 Mar 2021 | 19 Mar 2021 | |||
| 13 Sep 2018 | 13 Sep 2018 |
Technical Notes & Articles (1)
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| 13 Sep 2018 | 13 Sep 2018 |
Flyers (2)
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| 30 Apr 2021 | 30 Apr 2021 | |||
| 04 May 2020 | 04 May 2020 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWT80V60DF
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
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SPICE models (1)
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| ZIP | 10 Dec 2014 | 10 Dec 2014 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWT80V60DF | NRND | Trench gate field-stop IGBT, V series 600 V, 80 A very high speed | TO-3P | Industrial | Ecopack2 | |
STGWT80V60DF
Package:
Trench gate field-stop IGBT, V series 600 V, 80 A very high speedMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGWT80V60DF | 2 distributors | Buy Direct | NRND | EAR99 | NEC | Tube | TO-3P | -55 | 175 | SOUTH KOREA | Trench gate field-stop IGBT, V series 600 V, 80 A very high speed | 5.05 / 1k | ||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
