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This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ= 175 °C
- Tail-less switching off
- VCE(sat)= 1.85 V (typ.) @ IC= 80 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | General Description | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|---|
| STGWT80V60DF | TO-3P | Tube | Active | 5.05 | 1000 | EAR99 | KOREA (south) | Trench gate field-stop IGBT, V series 600 V, 80 A very high speed | Check Availability |
STGWT80V60DF
Package
TO-3PPacking Type
TubeUnit Price (US$)
5.05*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWT80V60DF | Active | Trench gate field-stop IGBT, V series 600 V, 80 A very high speed | TO-3P | Industrial | Ecopack2 | |
STGWT80V60DF
Package:
Trench gate field-stop IGBT, V series 600 V, 80 A very high speedMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
