STH110N7F6-2

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N-channel 68 V, 0.0055 Ohm typ., 110 A STripFET F6 Power MOSFET in a H2PAK-2 package

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Product overview

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

  • All features

    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
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STMicroelectronics - STH110N7F6-2

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